We report 4H-SiC single crystal growth of 4inch in diameter and micropipe-free crystal growth. Large single crystals were grown along c-axis and enlarged from smaller (0001) seed crystals. We confirmed that the center part of grown crystals is different in defect elongation from the enlarged part by x-ray topography. Especially, micropipes (MP) and screw dislocations (SD) are converted to basal plane dislocations in the enlarged part. By using this phenomenon, we realized a high quality crystal in the enlarged part that has x-ray rocking curve FWHM as small as 10.6arcsec. We also confirmed the crystal did not have MP and SD in a region of about 1inch in diameter using etch pits observation and synchrotron x-ray topography. We also report the long length growth along a-axis growth on a () seed crystal and succeeded in the MP-free crystal growth.