We have investigated preferential growth directions and natural crystal habit during PVT growth of SiC. It is shown that the (-1100), (-1101) and (-1102) planes do not develop stable atomically flat facets, but interfaces consisting of a mixture of different faces. Contrary, the (01-15) facet is the most stable after the conventional (0001) facet. Hollow micropipe defects propagating along the [0001] axis of the seed are vanished in the grown crystal during growth performed on (01-15) plane. Polytype information is transmitted along the c-axis. Hollow cores generated at latter stages of growth are however aligned along growth direction. Growth along [01-15] is shown to be very promising for preparation of micropipe-free SiC.