Well known obstacles in solution growth of SiC are very small growth rate limited by low solubility of carbon in silicon-based melts used up to now in flux growth and poor growth stability. The emphasis of our work was the search for alternative high-temperature solvents for SiC taking the example of SiC-B4C eutectic. The main problem of using this eutectic system is the choice of a practical crucible material. To solve this problem we have prepared polycrystalline SiC crucibles of high-purity and of theoretical density using the approach of PVT growth on graphite mandrels. Crystal growth experiments have been conducted in SiC crucibles at temperature of 2300-2350degreesC. Both self-nucleated SiC platelets up to 5 mm in diameter and epitaxial layers on PVT grown 6H-SiC substrates have been grown.