This paper discusses surface mechanisms in homoepitaxial growth of alpha-SiC {0001}-vicinal faces, regarding to (i) competition between step-flow and spiral growth on 6H-SiC, and (ii) role of off-angle and C/Si ratio for surface defect formation on 4H-SiC. For the competition between step-flow and spiral growth, a high C/Si ratio was found to enhance spiral growth, while a low C/Si ratio to enhance step-flow growth. For the surface defect formation on (0001)(Si), a large off-angle and low C/Si ratio are preferrable to suppress major surface defects. In the case of (0001)(c), thermal oxidation can be used to remove surface damages, thus suppressing major surface defects.