Structural, microstructural, electrical and optical characterization of 4H-SiC(1120) homoepitaxial films and their substrates have been conducted. The number of domains and the range of full-width half-maxima values of the x-ray rocking curves of the (1120) wafers (15 to 40 arcsec) were smaller than the analogous values acquired from the (000 1) materials (15 to 60 arcsec). Hydrogen etching of the former surface for 5 and 30 minutes reduced the RMS roughness from 0.52 nm to 0.48 nm and to 0.28 nm, respectively; the RMS roughness for a 30 mum film was 0.52 nm. Micropipes in the substrates did not thread beyond the film-substrate interface. Hall mobilities and carrier concentrations of 12,200 cm(2)/Vs and 3.1 x 10(14)/cm(3) and 800 cm(2)/Vs and 7.4 x 10(14)/cm(3) were measured at 100degreesK and 300degreesK, respectively. Photoluminescence indicated high purity.