The pendeo epitaxial growth of 3C-SiC on (100) Si and (111) Si substrates has been investigated to reduce interfacial defects. Pendeo epitaxial growth of 3C-SiC on the patterned seed 3C-SiC was performed by CVD using hexamethyldisilane (HMDS) as a source gas. In pendeo epitaxial growth of 3C-SiC on (100) Si, a lateral growth of approximately 2.6 mum and trapezoid shapes with (-111) and (1-11) faces were achieved, simultaneously were formed. However 3C-SiC also grew from both the sidewalls of the Si columns and the bottom of the Si valley. Based on this result, 3C-SiC/Si columns were patterned deeper in the substrate. In addition, Si columns supporting the patterned seed 3C-SiC was etched by HCl gas. As a result of the regrowth, spherical shape 3C-SiC were formed and grew laterally close to each other. Pendeo epitaxial growth of 3C-SiC on (I 11) Si gave less promising results.