Structure and composition of 3C-SiC : Ge alloys grown on Si (111) substrates by SSMBE

Weih P; Cimalla V; Stauden T; Kosiba R; Spiess L; Romanus H; Gubisch M; Bock W; Freitag T; Fricke P; Ambacher O; Pezoldt J

Materials Science Forum, Vol.457-460, 293-296, 2004

Weih P, Cimalla V, Stauden T, Kosiba R, Spiess L, Romanus H, Gubisch M, Bock W, Freitag T, Fricke P, Ambacher O, Pezoldt J

In the present work first results of (Si1-xC1-y)Gex+y alloy growth on Si (I 11) substrates by solid source molecular beam epitaxy are presented. The structure and the chemical composition of the heteroepitaxial layers in dependence on the growth temperature were investigated. The maximum Ge concentration of 0.16% in the grown alloys was achieved at 900 T substrate temperature.

Keywords:(Si1-xC1-y)Gex+y alloy;molecular beam epitaxy;secondary ion mass spectometry;Auger electron spectroscopy;transmission electron microscopy