In this study we report on the effect of Ge coverage prior to carbonization, on the stress state in 3C-SiC thin films grown by solid source MBE on Si (I 11). Plan view mu-Raman technique was used to extract the residual stress in the 3C-SiC films. The obtained results showed that the stress depends strongly on the Ge amount and decreases linearly with increasing the Ge amount. The linear dependence of the residual stress allows to adjust the stress to a given value. For the obtained correlation between the predeposited amount of Ge and the residual stress a model will be proposed to explain the obtained results within the framework of the S-correlated theory of 3C-SiC on Si.