Low temperature (<320 degreesC) deposition of hydrogenated microcrystalline cubic silicon carbide ( muc-3C-SiC:H) thin films was realized by using hot wire chemical vapor deposition (HWCVD). Monomethylsilane (SiH3CH3) and hydrogen (H-2) were used as reactant gases. Under high hydrogen dilution conditions (H-2/SiH3CH3=125), muc-SiC films were successfully deposited on Coming 7059 glass and Si (100) substrates, as evidenced by X-ray diffraction studies. Si-H,, stretching vibration was observed in infrared absorption spectra of the films, indicating that the muc-SiC films were hydrogenated. Bandgap of the films determined by optical absorption spectra is about 2.2 eV. This value is corresponding to 3C-SiC. These results indicated that HWCVD is one of the promising candidates for low temperature deposition of muc-3C-SiC:H thin films.