Materials Science Forum, Vol.457-460, 537-540, 2004
Partial dislocations and stacking faults in 4H-SiC PiN diodes
Using plan-view transmission electron microscopy (TEM), we have identified stacking faults (SFs) in 4H-SiC PiN diodes subjected to both heavy and light electrical bias. Our observations suggest that the widely-expanded SFs seen after heavy bias are faulted dislocation loops that have expanded in response to stresses within the 4H-SiC film, while faulted screw or 60degrees threading dislocations do not give rise to widely-expanded SFs. An analysis based on continuum mechanics indicates that the expansion of SFs depends on the Peach-Koehler forces acting on the partial dislocations bounding the SFs, indicating that stress plays a critical role in SF expansion.