Deep level transient spectroscopy (DLTS) is employed as an analytical tool in order to distinguish between as-grown and process-related defects in Schottky barrier diodes fabricated on bulk off-axis n-type 6H-SiC. This is accomplished by comparing defects in annealed and non-annealed devices, defects in devices fabricated by employing thermal (resistive) or E-beam metallisation, as well defects in as-fabricated and hydrogenated devices.