DLTS measurements of Sc impurity in silicon carbide were carried out. Deconvolution of broadened DLTS-spectra using Tikhonov's regularization algorithm showed a broad DOS function indicating presence of a set of energy levels in the gap. Theoretical investigations by DFT X-alpha-DV method demonstrated that Sc atoms prefer to substitute the Si atoms with simultaneous shift of the last one into interstitial position, giving origin to several energy levels.