Deep band gap states of gadolinium (Gd) were investigated in hexagonal silicon carbide (SiC) by means of Radiotracer Deep Level Transient Spectroscopy (DLTS). Ion implantation was used to dope the samples with the isotopes Gd-149 (radioactive) and Gd-156 (stable) followed by thermal annealing procedures and contact preparation. Repeatedly taken DLTS spectra reveal time-dependent concentration changes of band gap states correlated with the half life of the Gd-149 isotope implanted. Their level parameters are E-T = E-V+0.94(2) eV in 4H-SiC respective 0.45(1) eV and 0.95(2) eV in 6H-SiC; the associated capture cross sections sigma are about 3 x 10(-14) cm(2) for both polytypes. Scanning the upper part of the SiC band gap reveals no time-dependent concentration changes of states indicating the non-existence of Gd induced deep levels in this regime.