The effect of roughness and chemical treatment of 3C-SiC film surface on Ni ohmic contact was studied in this work. 3C-SiC (111) film was grown on Si (111) in a chemical vapor deposition (CVD) reactor. The 3C-SiC surface was polished using a chemical mechanical polishing (CMP) technique to get a smooth and flat surface. The polished surface was oxidized and then was etched in BHF solution to remove subsurface damages formed during the CMP process. It was shown that the surface morphology and subsurface damage concentration of 3C-SiC films are important factors to give a great effect on the contact characteristic of the 3C-SiC films. However, it was considered that the reduction of subsurface damage concentration is essential to get better contact resistance to 3C-SiC surface.