A detailed study on the interface properties involving the use of a thin layer of silicon (Si) between the nickel (Ni)and silicon carbide (SiC) has been conducted using X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). The study was initiated from an atomically clean surface on a 4H-SiC epilayer sample under Ultra High Vacuum (UHV) conditions. A layer of Si of various thickness was deposited at room temperature, followed by a sequential deposition of Ni. The contact was then annealed from 400degreesC to 1200degreesC. Throughout the process, the sample was sequentially monitored by XPS to observe any changes in the interface properties and the carbon (C) content. The carbon spectra were observed to consist of only bulk C and a small amount of free C at temperatures up to 1000degreesC. However, at the Ni-SiC interface, the C spectra would consist of large amount of free C and graphite. The results are discussed in detail, focusing on the effect of the Si interlayer and the resultant C content at the interface.