Three types of low resistivity Al-based ohmic contacts to p-type 4H-SiC, Au/Al/Si, Au/AlSiTi and Au/Ti/Al have been studied. Reproducible contact resistivity of 8.30x10(-5) Omegacm(2), 6.42x10(-5) Omegacm(2) and 1.42x10(-5) Omegacm(2) has been obtained for Al/Si, AlSiTi and Al/Ti contacts, respectively. The investigation of the thermal properties of Al-based contacts shows that addition of Ti to the contact composition improves its stability at ageing temperatures as high as 700 degreesC, at operating temperatures up to 450 degreesC and current densities of 10(3) A/cm(2). XPS analysis of as-deposited and annealed contacts has been performed to explain the observed thermal properties.