High-dose aluminum (Al+) implantation into 4H-SiC (11-20) has been investigated. Implantations were carried out at 500 degreesC or room temperature. Post-implantation annealing was performed in an Ar ambient at 1800 degreesC using a CVD reactor. In the case of room-temperature (RT) implantation into (11-20), a sheet resistance of 1.9 kOmega/sq. could be achieved by co-implantation with carbon ions. For 500 degreesC implantation, the lowest sheet resistance of 1.7 kOmega/sq. was obtained by increasing the Al+ dose up to 6.0 x 10(16) cm(-2). The Hall-mobility (hole) differs in (11-20) and (0001). The mobility in (11-20) is 10 cm(2)/Vs at RT, which is about 3 times higher than that in (0001).