The effectiveness of Boron implanted guard ring (GR) edge termination for SiC Schottky diodes was investigated. Boron implants of energies up to 350 keV (total dose of 7.1(.)10(14)cm(-2)) and up to 200 keV (2.4(.)10(14)cm(-2)) were used to form a box doping profile in GR for the depth of 700 and 400 nm, respectively. The influence of doping level on GR performance was investigated through the use of post implantation annealing under different conditions to vary the Boron activation rate, and reactive ion etching (RIE) to reduce the total surface charge in GR. Fabricated 4H-SiC Schottky diodes revealed soft recoverable avalanche breakdown at voltage of about 1300 V which is 70% of ideal breakdown voltage value.