We fabricated 4H-SiC Schottky barrier diodes with various metals such as titanium, nickel and platinum. Density of interface states D-it and neutral level phi(o) (which is the position that the Fermi level must assume if the surface is electrically neutral) were calculated 1.8 x 10(12) cm(-2) eV(-1) and 1.76 eV, respectively. In order to reduce reverse leakage current, hydrogen annealing and hydrogen plasma treatment were performed after Schottky contact metallization. The reverse leakage current measured at -100 V was reduced by one or two order of magnitude. An improvement of reverse leakage current was observed in case of both hydrogen annealing and hydrogen plasma treatment.