Here we present results of the effects of various different radiations on the operation of Schottky barrier diodes produced using bulk SiC. Samples were irradiated using energies from < 1 keV ions in a plasma reactor to using 300 MEV/c pions at the Paul Scherrer Institut. Measurements of reverse current, and Schottky barrier height were used to quantify the damage induced by the different irradiations. Finally we observe the effect of high energy radiation on the CCE of Schottky detector diodes. A number of samples were irradiated using 300 MEV/c pions at the Paul Scherrer Institut these were the used to take spectra of Am-241 alpha particles which were compared to spectra taken using un-irradiated diodes. Investigations of trap and defect levels were undertaken at this stage to attempt to understand the incomplete CCE observed in unirradiated diodes.