This work reports the demonstration of a normally-off 4H-SiC double-gated, vertical junction field-effect transistor (VJFET) with implanted vertical channel without using epitaxial regrowth. With a 30 mum, 1.9X10(15)cm(-3) doped drift layer, over 4,300V VJFETs in the normally-off mode have been demonstrated with a specific on-resistance of 40 mOmegacm(2) up to a drain current density of 20A/cm(2) at 4.5V gate bias.