This paper reports the first, near theoretical limit breakdown voltage (1,750V) 4H-SiC BJTs with both high DC current gain(24.8) and low specific on-resistance (8.4mOmega(.)cm(2) at 50A/cm(2) and 12mOmega(.)cm(2) at 356A/cm(2)) based on a drift layer of only 12mum, doped to 8.5x10(15)cm(-3). The high performance is achieved through the use of an optimum single-step junction termination extension (JTE), Al-free base Ohmic contact and wet-oxygen low-temperature re-oxidation annealing. Detailed processing conditions are reported. Room temperature and high temperature current-voltage characteristics are also reported.