This paper presents the design, fabrication and characterization of 4H-SiC trenched-and-implanted vertical JFETs (TI-VJFETs) [1]. The design of TI-VJFETs with active areas of 9.38x10(-2) mm(2) and 2.03 mm(2) and different vertical channel openings is presented based on a blocking layer of 9.4mum, doped to n=7x10(15)cm(-3). Highly vertical channel defined by trench etching and angled implantation of Al makes it possible to accurately control the vertical channel dimension, resulting in Tl-VJFETs with very low specific on-resistance. The TI-VJFET technology developed under this work is believed to be advantageous in comparison to other reported VJFET technologies because (a) it eliminates the need for epitaxial regrowth in middle of the device fabrication [2-5], (b) only one mask requires critical alignment throughout device fabrication, and (c) it provides intrinsically a much lower specific on-resistance due to the elimination of internal lateral MET gates. Successful applications of the technologies to the development of single-cell TI-VJFETs with power level of 6A -1,000V are reported.