Titanium dioxide (TiO2) films were prepared on quartz substrates by using Ti(O-i-C3H7)(2)(dpm)(2) and O-2 gas. The crystal structure, morphology and deposition rate of TiO2 films were investigated by changing deposition temperatures (T-dep) from 700 to 1100 K and total pressures (P-tot) from 0.6 to 1.0 kPa. The structure changed mainly with deposition temperature. Rutile TiO2 films with (200) orientation and anatase TiO2 films with (004) orientation both in a single phase were obtained at T-dep = 873 K and 723 K, respectively At T-dep > 873 K, the TiO2 films had a columnar microstructure consisting of mainly anatase and a small amount of rutile. At T-dep, = 723 to 873 K, the TiO2 films were the mixture of non-oriented rutile and slightly (004) oriented anatase having dense and fine-grain microstructure. The deposition rate of TiO2 films increased with increasing T-dep showing the maximum of 30 mu m h(-1) at T-dep = 973 K and P-tot = 0.6 kPa.