A V-4Cr-4Ti alloy and pure V were oxidized in flowing argon for 0.5-8h and subsequently annealed in vacuum for 16h at 973K. The oxygen of 1000-9000ppm was introduced into the V-alloys with little nitrogen, where oxygen was concentrated in region near the surface. By the annealing, oxygen was homogeneously diffused into depth of 150 mu m. The diffusion depth of oxygen in V-4Cr-4Ti is much smaller than that of pure V, because of Ti-O precipitates formed as oxygen trap. The study indicated that it is feasible to control oxygen level and distribute in the surface region of the vanadium alloys.