Considering practical application of field aided lateral crystallization process in channel region of thin film transistors, there might be a different crystallization behavior dependent on the shape of channel to be crystallized. In this study, channel array with various aspect ratios was prepared and the Cu field aided lateral crystallization process was carried out at 500 degrees C for 10 hours with applying 30V/200 mu m through common electrodes for the sake of the actual channel area crystallization. Both the fraction of crystallized area and the degree of crystallization increase as the aspect ratio of channel become away from 1.