The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layers. In this study, the relationships between the textures and microstructures and the properties of TiN films on semiconductor were investigated under different processing methods (PVD and MOCVD). The property of diffusion barrier of RF sputtered (PVD) TiN is better than that of metal organic chemical vapor deposited (MOCVD) TiN thin films. Also the property of diffusion barrier of PVD (111) textured TiN is better than that of PVD (100) textured TiN thin films on oxidized Si wafer.