In the present investigation a specially designed ceramic interlayer, which is able to supply suitable protection of the ZnS substrate against chemical attack by atomic hydrogen, and is helpful to reduce the thermal stress, has been developed. Nano-crystal line diamond films were successfully deposited on to the pre-coated multi-spectrum ZnS. It was found that diamond nucleation on the ceramic interlayer could be greatly enhanced by a metal or semiconductor mask placed on top of the pre-coated ZnS substrate, whereas diamond nucleation will not happen even by long time seeding in ultrasonic bath with fine diamond powder suspension. It was found that diamond nucleation is induced by the presence of the metal or semiconductor mask. To our knowledge this kind of phenomena of induced nucleation has not been reported. Detailed results and discussions were presented.