Amorphous thin Films of Ti-51.78 Ni22.24Pd25.98 alloys were deposited onto 2 inch diameter n-type (100)Si wafer by r.f. magnetron sputtering. The crystallization temperature from an amorphous state to crystallization of free-standing thin film was found to be 553.1 degrees C, but that of non-free-standing thin film on Si wafer was found to be higher from X-ray diffraction experiment. The film heated 1 h at 550 degrees C was partly crystallized but at 650 degrees C was almost whole crystallized. The film heated 1 h at 750 degrees C quite crystallized and some precipitation appear. Heated 50 h at 450 degrees C before crystallization the films would be accelerate B19' but restrain B19 formation in succeeding beat-treatment.