Materials Science Forum, Vol.480, 59-63, 2005
Electroluminescence from GaInAsP/InP VCSEL
Long-wavelength vertical cavity surface emitting lasers (VCSELs) operating in the 1.3 mu m to 1.5 mu m wavelength range are considered the best candidate for the future low-cost reliable light sources in fiber communications. However, the room temperature performance of GaInAsP/InP long-wavelength TO lattice matched material system falls below the short-wavelength VCSELs. In this work we present the results of our studies concerning IN and electroluminescence measurements on GaInAsP/lnP structure with distributed Bragg reflectors. The device lased at 0.98 mu m at room temperature.