In previous study, we investigated the effectiveness of methyl-doped silicon dioxide using methyl alcohol. In this paper we are trying to compare the effectiveness of doping using different alkyl groups on SiO2 to form a low-K dielectric material. As feature size in integrated circuits continues to shrink down, low-k interlayer dielectric (ILD) materials are being introduced in order to reduce the resistance-capacitance (RC) time delay. Dielectric, which serves as an important interlayer material in modern microelectronic devices, is expected to have k constant as low as 2.7 with doped using alkyl groups. The highlight of this paper is that all the alkyl's dopents are sourced from oxygenated alcohols. All the silicon samples are soaked in these alkyl liquids before sending for CVD. A standard condition is applied throughout the experiment. The FTIR scan shows that there is Si-CH3 bond formed. Through the CV measurement, the doped low k dielectric formed using methyl, ethyl and propyl have dielectric constant of 3.11, 2.85 and 2.76 respectively. The results are promising and this indicates that there is great potential of achieving even lower dielectric constant.