We present a survey of the most important factors relating to an epitaxial SiC growth process that is suitable for bipolar power devices. During the last several years, we have advanced our hot-wall SiC epitaxial growth technology to the point that we can support the transition of bipolar power devices from demonstrations to applications. Two major concerns in developing a suitable epitaxial technology are epilayer uniformity and extended defect density. Our state-of-the-art capability permits the realization of 1-cm(2) area devices with exceptional yields. Another major concern is the stability of bipolar devices during forward conduction. We have developed proprietary substrate and epilayer preparation technologies that have essentially eliminated V-f drift as a significant barrier to the exploitation of SiC based bipolar devices.