The fabrication process and the spectral properties of gratings for the infrared wavelength region on the basis of 3C-SiC layers grown by CVD on (100) oriented Si substrates are demonstrated. The formed 3C-SiC gratings on Si support two phonon polaritons as a function of the geometrical properties excited between 10.3 and 11.4 μ m. They appear as a dip in the transmission spectrum. A third minimum in the transmission spectrum is caused by the substrate - grating interaction. The obtained resonances were polarization sensitive, i.e. they appeared only under TM-polarized illumination.