Temperature-dependent Hall effect investigations in the channel of lateral 3C-SiC LDDMOSFETs with nitrogen(N)-implanted source/drain regions are conducted. The free electron concentration and the electron Hall mobility are independently determined. A maximum electron Hall mobility of 75 cm(2)/VS is observed. The gate oxide withstands electric field strengths up to 5 MV/cm. A high density of interface states of a few 10(13) cm(-2) eV(-1) close to the 3C-SiC conduction band edge still lowers the performance of the MOS device.