Investigations were carried out to achieve high performance Silicon Carbide Metal-Oxide-Semiconductor device structures. 4H-SiC/SiO2 interface was prepared by growing amorphous SiO2 layers by an alternate low temperature atmospheric CVD technique using TEOS as source material and the interface properties were compared with the one prepared by conventional thermal oxidation technique. The low temperature CVD technique offered the improvement of the interface properties with reduced D-it in comparison with thermally oxidized interface. As a new attempt, an in situ post growth annealing technique in N-2 atmosphere was carried out to reduce the Dit further. Both the CVD technique and the in situ annealing processes that were used in the present study have been identified to be potential approaches to improve the interface quality.