Oxidized Ta2Si layers have been used as high-k dielectric layer for 4H-SiC MOSFETs. The gate insulator was grown by dry oxidation of 40nm deposited Ta2Si during 1h at 1050° C. The dielectric constant obtained from 4H-SiC MIS capacitors is ∼ 20 with an insulator thickness of 150nm. These devices exhibit adequate subthreshold, saturation and drive characteristics. For the MOSFETs fabricated on a p-implanted and annealed region, a peak mobility up to 45cm (2)/Vs has been extracted. The specific on-resistance of this device is 29m&UOmega;. cm(2) at room temperature with V-DS = 0.2V and VGS = 14V.