Recently Ni/SiC contacts have been studied in order to achieve very low contact resistivity (pc) values on n-type SiC. In this work contact resistivity values of Ni-silicide contacts to n-type ion implanted 6H-SiC are analyzed aiming at extracting the Schottky Barrier Height (SBH). The n-type ion implanted 6H-SiC specimens were annealed at 1300, 1500, 1650° C for 20 min in a high purity Ar ambient. The p. values have been extracted from Transmission Line Method (TLM) measurements in the range of temperatures 25-290° C. The ρ(c) values are in the range 1-5 x 10(-5) &UOmega; cm(2) depending on the annealing temperature. The SBH OB,, has been extracted by exploiting the dependence of the contact resistivity on the temperature. By using the field emission model, the value obtained for OB, on our samples is in the range 1.1-1.3 eV depending on the annealing temperature. The SBH on p-type 6H-SiC has been evaluated on Schottky diodes by means of both I-V and C-V measurements. A value of qφ(Bp) = (1.75 ± 0.05) eV has been obtained on p-type SiC through the C-V method. The average SBH extracted from I-V data collected at room temperature is (1.19 ± 0.03) eV and this value increases as a function of the temperature until (1.50 ± 0.01) eV at 290° C. Differences between values of SBH extracted from I-V and from C-V measurements are explained in terms of inhomogeneous barrier height.