A 4H-SiC 600 V class Deep-Implanted gate Vertical JFET (DI-VJFET) is examined. The DI-VJFET exhibited a specific on-resistance of 13 mΩ cm(2), drain current of 5 A, and a blocking-voltage of 600 V In this paper, the very high temperature dependence (R.T.∼ 400 ° C) of the I-V characteristics is measured and the dominant factor of the on-resistance and the blocking-voltage is discussed. Moreover, the switching waveform of SiC DI-VJFET with SiC SBD is measured by using a half bridge, double-pulse circuit with inductive load at R.T. and 200 ° C. The turn-off time is 300 as at an inductance of 4 niH and an external gate resistance of 100 Ω.