In this work we demonstrate performant characteristics of 1.2KV Schottky, Junction Barrier Schottky (JBS) and implanted PN diodes processed on the same 4H-SiC wafer. A bi-layer Ni/Ti scheme for the contact metallisation submitted to high temperature rapid thermal anneals is proved to form good ohmic contact on p(+) implanted areas while maintaining good Schottky characteristics on lightly doped n-type regions. I-V characteristics have been evaluated from room temperature up to 560K. At room temperature, Schottky diodes have slightly better specific on-resistance, but when working temperature is increased, the JBS diode exhibits better characteristics due to the temperature dependent activation of bipolar current injection from the p(+) grid. From reverse measurements, the JBS diodes showed lower leakage current and higher breakdown voltages in comparison to that of the Schottky diodes in the whole range of temperatures.