Nuclear-particle detectors based on SiC with a structure composed of an n(+)-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ∼ 10-μ m-thick 6H-SiC layer exhibit transistor properties, whereas those with a ∼ 30-μ m-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 x 10(13) cm(-2) ; in this case, the resolution is ≤ 10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ≈ 3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 x 10(14) cm(-2).