A silicon steel single crystal with initial Goss orientation, i.e. the {110}< 001 > orientation, was cold rolled up to 89 % thickness reduction. Most of the crystal volume rotates into the two symmetrical equivalent {111}< 112 > orientations. However, a weak Goss component is still present after high strain, although the Goss orientation is mechanically instable under plane strain loading. Two types of Goss-oriented crystal volumes are found in the highly deformed material. We suggest that their origin is different. The Goss-oriented regions that are observed within shear bands form during the cold rolling process. In contrast, those Goss-oriented crystal volumes that are found inside of microbands survive the cold rolling.