Effects of Additive on Electrical Tree Behavior in Epoxy Resin

Young-Shin Cho; Hong-Ki Lee; Mi-Ja Shim; Sang-Wook Kim

Journal of Industrial and Engineering Chemistry, Vol.3, No.3, 171-176, September, 1997

Young-Shin Cho, Hong-Ki Lee¹, Mi-Ja Shim², and Sang-Wook Kim

Dept. of Chem. Eng., The Univ. of Seoul, Seoul 130-743, Korea
¹Dept. of Chem. Eng., Woosuk Univ., Chonbuk 565-800, Korea
²Dept. of Life Sci., The Univ. of Seoul, Seoul 730-743, Korea

The electrical tree behaviors in the cured DGEBA(diglycidyl ether of bisphenol A)-MDA(4,4'-methylene dianiline) epoxy resin system according to the addition of SN(succinonitrile) were studied. The effects of temperature and electrode separation on the dielectric breakdown strength were measured. The discolored region detected around the needle electrode under high electric field corresponded to the rearrangement of unreacted functional groups and post-curing reaction by electro-chemical reaction. With the increase of SN content, the dielectric breakdown strength reduced and saturated to 25 kV/mm. As the temperature and electrode gap increased, the dielectric breakdown strength decreased. The shape of the tree in this system was dendrite type.

[References]

Bamji SS, Bulinski AT, Densley RJ, IEEE Trans. Electr. Insul., 24, 91 (1989)
Bamji SS, Bulinski AT, Densley RJ, Matsuki M, IEEE Trans. Electr. Insul., 26, 278 (1991)
Maruyama S, Kobayashi S, Kude K, T. IEE Japan, 113-A, 480 (1993)
Champion JV, Dodd SJ, Steven GC, J. Phys. D: Appl. Phys., 27, 1020 (1994)
Cho YS, Shim MJ, Kim SW, IUMRS-ICA-1995, Seoul, 539 (1995)
Cho YS, Lee SH, Lee HK, Shim MJ, Lee JH, Kim SW, Proc. of HNTTI'96, Dandong, China, 755 (1996)
Mizutani T, Suzuoki Y, Kon H, Hattori K, Suzuki T, Proc. of the 2nd Joint Symp. on EI&DM in Seoul, 18 (1993)
Lee JY, Shim MJ, Kim SW, Mater. Chem. Phys., 44, 74 (1996)
Shim MJ, Kim SW, Mater. Chem. Phys., 47, 198 (1997)
Fujii H, Hirasawa E, T. IEE Japan, 107-A, 531 (1987)
Kitamura Y, Hirabayashi S, T. IEE Japan, 106-A, 16 (1986)
Cho YS, Lee HK, Shim MJ, Kim SW, J. Korean Ind. Eng. Chem., 6(4), 740 (1995)
Cho YS, Shim MJ, Kim SW, J. Korean Ind. Eng. Chem., 6(4), 707 (1995)
Rasikawan S, Ishihara H, Shimizu N, T. IEE Japan, 112-A, 223 (1992)
Lee JY, Shim MJ, Kim SW, Mater. Chem. Phys., 48, 36 (1997)

[Referenced By]

[1] Bamji SS, Bulinski AT, Densley RJ, IEEE Trans. Electr. Insul., 24, 91 (1989)

[2] Bamji SS, Bulinski AT, Densley RJ, Matsuki M, IEEE Trans. Electr. Insul., 26, 278 (1991)

[3] Maruyama S, Kobayashi S, Kude K, T. IEE Japan, 113-A, 480 (1993)

[4] Champion JV, Dodd SJ, Steven GC, J. Phys. D: Appl. Phys., 27, 1020 (1994)

[5] Cho YS, Shim MJ, Kim SW, IUMRS-ICA-1995, Seoul, 539 (1995)

[6] Cho YS, Lee SH, Lee HK, Shim MJ, Lee JH, Kim SW, Proc. of HNTTI'96, Dandong, China, 755 (1996)

[7] Mizutani T, Suzuoki Y, Kon H, Hattori K, Suzuki T, Proc. of the 2nd Joint Symp. on EI&DM in Seoul, 18 (1993)

[8] Lee JY, Shim MJ, Kim SW, Mater. Chem. Phys., 44, 74 (1996)

[9] Shim MJ, Kim SW, Mater. Chem. Phys., 47, 198 (1997)

[10] Fujii H, Hirasawa E, T. IEE Japan, 107-A, 531 (1987)

[11] Kitamura Y, Hirabayashi S, T. IEE Japan, 106-A, 16 (1986)

[12] Cho YS, Lee HK, Shim MJ, Kim SW, J. Korean Ind. Eng. Chem., 6(4), 740 (1995)

[13] Cho YS, Shim MJ, Kim SW, J. Korean Ind. Eng. Chem., 6(4), 707 (1995)

[14] Rasikawan S, Ishihara H, Shimizu N, T. IEE Japan, 112-A, 223 (1992)

[15] Lee JY, Shim MJ, Kim SW, Mater. Chem. Phys., 48, 36 (1997)