Strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs are investigated including important aspects like C-V characteristics, mobility, and ON current. The simulations are based on the self-consistent solution of 6 x 6 k.p Schrodinger Equation, multi subband Boltzmann Transport Equation and Poisson Equation, and capture size quantization, strain, crystallographic orientation, and SiGe alloy effects on a solid physical basis. The simulation results are validated by comparison with different experimental data sources. The simulation results show that the strained SiGe HOI PMOSFET with (110) surface orientation has a higher gate capacitance and a much higher mobility and ON current compared to a similar device with the traditional (001) surface orientation. (C) 2011 Elsevier Ltd. All rights reserved.