Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration

Sibaja-Hernandez A; You SZ; Van Huylenbroeck S; Venegas R; De Meyer K; Decoutere S

Solid-State Electronics, Vol.65-66, 72-80, 2011

DOI10.1016/j.sse.2011.06.014 Export Citation

Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration

Sibaja-Hernandez A, You SZ, Van Huylenbroeck S, Venegas R, De Meyer K, Decoutere S

A 2D TCAD based device architecture exploration of SiGe:C NPN HBTs is presented. Two novel and one conventional self-aligned architectures are explored by process and device simulation. All these three architectures show their capability of achieving maximum oscillation frequency (f(max)) of 500 GHz for scaled layout rules. (C) 2011 Elsevier Ltd. All rights reserved.

Keywords:Heterojunction bipolar transistor;Silicon-germanium;2D TCAD;Maximum oscillation frequency;Cutoff frequency