Effects of applied bias voltage on tunneling electroresistance and tunneling magnetoresistance in multiferroic tunnel junctions with ferroelectric barrier and dissimilar ferromagnetic electrodes are theoretically investigated. Taking into account the electric field effect on permittivity of ferroelectric films, the applied bias voltage could creates a sizable influence on the permittivity-dependent tunneling electroresistance and tunneling magnetoresistance. The calculations could indicate a prospective way for reading the states of tunnel junction with a pronounced difference in resistance, which may provide some contributions to practical applications in memories and spintronics. (C) 2011 Elsevier Ltd. All rights reserved.