Location controlled high performance single-grain Ge TFTs on glass substrate

Chen T; Ishihara R; Beenakker K

Solid-State Electronics, Vol.69, 94-98, 2012

DOI10.1016/j.sse.2011.11.027 Export Citation

Location controlled high performance single-grain Ge TFTs on glass substrate

We report high performance single-grain Ge TFTs by mu-Czochralski process. Electron mobilities are 3337 cm(2)/Vs with on/off ratio of 10(8) @V-DS = 0.1 V. Hole mobilities are 1719 cm(2)/Vs with on/off ratio of 10(8) @V-DS = 0.05 V. The high mobility is due to improved interface property and tensile stress. (c) 2011 Elsevier Ltd. All rights reserved.

Keywords:Thin film transistors;Laser crystallization;Ge transistors;Excimer laser crystallization