In previous reports, we have investigated on the influence of current transport mechanism on the sensitivity of InP Schottky and pseudo-Schottky diodes, for nitrogen dioxide detection. In this paper, the influence of the metal nature and the structure of the rectifying contact on the sensing layer are highlighted. More especially, we will focus on the behavior of these Schottky structures during and after their exposures to nitrogen dioxide (NO2) and ozone (O-3. In this context, two types of structures have been studied: the simple Schottky diodes and the more elaborated structures called pseudo-Schottky. These diodes are realized with Au or Pd as metals. First, we will describe samples preparation and electrical characterization of the two types of structures. Then, we will compare sensor responses of these different structures under NO2 and O-3. Finally, to better understand the action of these gases on the sensitive layer (the Schottky contact), X-rays photoelectron spectroscopy (XPS) is performed to follow the evolution of the metallic layer. The poisoning effect of active sites, which appears after NO2 and O-3 expositions, is illustrated by comparative study of the active layer before and after exposure. (c) 2012 Elsevier Ltd. All rights reserved.