화학공학소재연구정보센터
Solid-State Electronics, Vol.73, 74-77, 2012
Amorphous indium-gallium-zinc oxide thin-film transistors instability and stress evaluation by Stretched-Exponential model
We have successfully fabricated large sized amorphous indium-gallium-zinc-oxide based active-matrix liquid-crystal displays, which uses Molybdenum/Aluminum/Titanium as source/drain electrode. In this study, an oxygen-rich etch stop layer acts as the oxygen atom supplier and converts the titanium layer into titanium oxide layer, which is found to induce instability of the device. Sample without titanium oxide has an initial threshold voltage shift is less than +/- 0.1 V after the repeatedly measuring over a period of two weeks. In addition, the IGZO based device demonstrated superior transfer characteristic. This paper established that the stability of the amorphous indium-gallium-zinc-oxide based active-matrix liquid-crystal display can be predicted by Stretched-Exponential model. Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.