In this paper we report on a newly developed nanowire based field-effect device-architecture feasible for the use in high temperature environments. This nanowire field-effect-transistor (NWFET) is virtually undoped and therefore the device type (i.e. P-type or N-type) can be selected by the application of an appropriate bias to a second gate, namely the back-gate, enabling an additional degree of freedom in logic design. Moreover, the presented devices exhibit low OFF-state currents, even at elevated temperatures, making low-power applications attainable with today's conventional silicon (and SOI) CMOS technology. By changing the source/drain bias-polarity, electrical properties of the NW-devices can be tuned, whether the lowest possible leakage current, or maximum output current is desirable in a specific logic application. (c) 2012 Elsevier Ltd. All rights reserved.