The variability performance of JAM devices is studied owing to an analytical formula for V-t variance and to 2D numerical simulation doping sensitivity analysis. Both approaches clearly indicate that JAM devices exhibit 2-5 times larger V-t and drain current variability than in inversion mode Trigates. This suggests that the optimization of JAM transistors should carefully take into account this aspect in their technological design. (C) 2012 Elsevier Ltd. All rights reserved.